| PART |
Description |
Maker |
| K4H511638F-LC/LCC K4H510438F-LC/LB3 K4H510838F-LC/ |
512Mb F-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4H511638G |
512Mb G-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4H510438D-UC/LA2 K4H510838D-UC/LA2 K4H511638D-UC/ |
512Mb D-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4H511638D K4H510438D |
(K4H51xx38D) 512Mb D-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4H510838B-VC_LCC K4H510838B-N K4H510838B-NC_LA2 K |
512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)
|
SAMSUNG[Samsung semiconductor]
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYMD512M646CLFP8-D43 HYMD512M646CLFP8-J HYMD512M64 |
200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (FBGA)
128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| HY5DU121622BLTP-X HY5DU12822BLTP-X |
512Mb DDR SDRAM 产品512Mb DDR SDRAM
|
Hynix Semiconductor, Inc.
|
| K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S |
512Mb B-die SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4T51163QC-ZCCC K4T51163QC-ZCD5 K4T51163QC-ZCD6 K4 |
512Mb C-die DDR2 SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4T51043QE |
512Mb E-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
